Accurate Small-Signal Equivalent Circuit Modeling of Resonant Tunneling Diodes to 110 GHz

This article presents a novel, on-wafer deembedding technique for the accurate small-signal equivalent circuit modeling of resonant tunneling diodes (RTDs). The approach is applicable to stabilized RTDs, and so enables the modeling of the negative differential resistance (NDR) region of the device’s current–voltage ( $I$ – $V$ ) characteristics. Furthermore, a novel quasi-analytical procedure to determine all the equivalent circuit elements from the deembedded S-parameter data is developed. Extraction results of a $10\,\,\mu \text{m}\,\,\times 10\,\,\mu \text{m}$ stabilized, low-current density RTD at different bias points show excellent fits between modeled and measured S-parameters up to 110 GHz.