Tuning the Microstructure of the Pt Layers Grown on Al 2 O 3 (0001) by Different Sputtering Methods

High-quality epitaxial Pt _lms are usually grown by molecular beam evaporation (MBE) techniques, where the deposited atoms reach the substrate with typical thermal energies. To obtain a good epitaxial growth, the substrate is kept at elevated temperatures ranging between few hundred to thousand degrees. While the epitaxial quality improves at higher substrate temperatures, above a critical temperature Volmer-Weber growth mode starts and causes a rough _lm morphology. Here, we use a new type of facing target cathode (FTC) to grow Pt onto Al2O3 (0001) substrates. In contrast to conventional sputtering sources, FTC sources provide adatoms with lower kinetic energies, but higher growth rates compared to MBE. In this study, the crystal structure of Pt films is compared for different substrate temperatures. Using FTC, at Pt films with low strain and a morphology that is either nanocrystalline or highly epitaxial could be grown through proper choice of substrate temperature.