A bi-layer buffer system AlN/Al1−xInxN to enable the growth of high crystal quality Al0.36In0.64N thin films on Si (111)

We report a low-power and low-temperature radio frequency reactive magnetron sputtering to grow highly c-axis oriented wurtzite Al0.36In0.64N thin films on a Si (111) substrate using a unique AlN/AlInN bi-layer buffer, which creates the possibility to grow high crystal quality Al0.36In0.64N.