Plasma process of Silicon Germanium alloy: molecular dynamics simulation study (Conference Presentation)

We performed molecular dynamics (MD) simulation to study the evaluation of silicon germanium alloy (SiGe) damage with oxidation behavior after plasma gas treatments. Our study provides a fundamental understanding of the atomistic/ molecular level of SiGe behavior after plasma etching of a contact etch stop layer (CESL). We found that simulation results are very good agreement with experimental data from Secondary ion mass spectroscopy (SIMS) and Transmission Electron Microscope (TEM)/ Energy-dispersive X-ray spectroscopy (EDS) and the detailed atom and bond analysis are obtained to study the surface reaction during the plasma process