Optimization of pitch-split double patterning photoresist for applications at the 16nm node
2011
Pitch-split resist materials have been developed for the fabrication of sub-74 nm pitch semiconductor devices. A
thermal cure method is used to enable patterning of a second layer of resist over the initially formed layer. Process
window, critical dimension uniformity, defectivity and integration with fabricator applications have been explored. A
tone inversion process has been developed to enable the application of pitch split to dark field applications in addition to
standard bright field applications.
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