AlGaN/GaNHFETson SiSubstrates forWiMAX Applications

AlGaN/GaNHFETsonSisubstrates aretested underOFDM modulations andshowexcellent performance from 3.3GHzto3.8GHz.Performance onan8mm device (NPT35010) inpowersmalloutline package(PSOP2)shows1.5Woutput power,11.2dBgain, 28.6%drainefficiency and2% EVM at 3.5GHz.Largeperiphery 36mm devices weremountedin ceramic packages (NPT35050) andshowedgreater than7W output power, > 11dBgain, 27.2%drain efficiency and2% EVM at3.5GHz.Additionally datawastakenacross process from23 devices and5process lots todemonstrate repeatability. Finally thesameRF datawascollected overflange temperature from- 40°Cto+85°Cand demonstrated stable performance over temperature. Theseresults demonstrate thepotential forGaN- on-Si HEMTsforuseinWiMAX applications. IndexTerms - AlGaN/GaNHFETs,GaN highelectron mobility transistors (HEMTs), linearity, RFpowertransistors.