Effect of Solidification Induced Defects in CZ- Silicon Upon Thin Gate Oxide Integrity

In this study, dielectric breakdown strength of silicon dioxide film of 5 to 25nm in thickness is revealed to be determined only by the amount of tiny solidification induced defects in magnetic field applied and conventional CZ silicon single crystals. Nucleus of oxygen induced stacking fault, heavy metal impurities on the surface and surface microroughness are less sensitive factors for it. The deteriorated integrity of the thin films is recovered only by the high temperature annealing at 1250°C under oxygen ambient.