THE IMPRINT RATE OF Pb(Zr0.55,Ti0.45)O3 FERROELECTRIC THIN FILMS

ABSTRACT Lead zirconate titanate (Pb(Zr0.55Ti0.45)O3, PZT) ferroelectric thin films were successfully prepared on the Pt(111)/Ti/SiO2/Si(100) substrates by RF-magnetron sputtering method. The imprint properties of PZT films have been investigated at room temperature. Our experimental results indicate the voltage shift along with time is subjected to a logarithmic function, and the simulation results are identical with the experimental values. The rate of imprint is time inversely dependent.