Deep inductively coupled plasma etching of ELO-GaN grown with high fill factor
2011
The epitaxial lateral overgrowth (ELO) gallium nitride (GaN) was grown with high fill factor using metal organic
chemical vapor deposition (MOCVD). The inductively coupled plasma (ICP) etching of ELO-GaN based on
Cl 2 /Ar/SiCl 4 gas mixture was performed. Surface properties of ELO-GaN subjected to ICP etching have been
investigated and optimized etching condition in ELO-GaN with ICP etching is presented. Radiofrequency (RF) power
and the flow rate of Cl 2 gas were modified during the experiments. The window region, wing region and the edge region
of ELO-GaN pattern present different etching characteristics. Different etching conditions were studied to get the
minimized plasma-induced damage, relatively high etching rates, and excellent surface profiles. Etch depths of the
etched ELO-GaN with smooth surface up to about 19 μm were achieved. The most suitable three-step etching condition
is discussed with the assessment based on the morphology observation of the etched surface of ELO-GaN patterns.
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