New Material Solution for Implant Processes Containing Halogens or Oxygen

Gas-based ion implantation with halogen containing compounds, especially fluorine, or oxygen, cause high stress on source materials such as tungsten and molybdenum. Sources can fail prematurely stemming from a reaction between halogen or oxygen ions in the source plasma with the source materials. Based on well-established Plansee refractory metals (RM = W, WL, Mo) a range of new materials with Carbon and Boron (RM-CxBy) were developed. These materials are produced via a controlled process resulting in a completely binder- and addition-free material, which thus exhibits only the fully accepted constituents W, WL, Mo, C, or B. Test results in implanters show clear lifetime and process improvements suggesting integration of these materials into common equipment platforms and regular process rotations.