2P-441 Control of sputtered Sb-Cu metal precursor films by pre-annealing treatment in the preparation of CuSbS 2 thin films

Copper antimony sulfide (CuSbS2) is one of the most interesting materials for an absorber layer as an alternative Cu(In,Ga)Se2 (CIGS) absorber because of its direct band gap energy of about ~1.6 eV and an optical absorption coefficient of around 104cm-1, which means the potential of CuSbS2 as photovoltaic applications. In this work, we have investigated the effect of pre-annealing treatment on the chemical and physical states of CuSbS2 precursor films. We firstly deposited Cu and Sb metal stack by sputtering process, followed by pre-annealing process with various temperature profiles. Detailed condition of pre-annealing process, such as pre-annealing temperature, pre-annealing time, and ramping rate, were closely related with the properties of CuSbS2 precursor films, which were also closely related with sulfurized CuSbS2 thin films. **This work was supported by DGIST R&D Program of the Ministry of Science, ICT & Future Planning of Korea (17-BD-05).