Effects of sputtering time on the properties of ZnO thin films prepared by magnetron sputtering

ZnO thin films were prepared by reactive DC magnetron sputtering under different growth time. It was found that the ZnO thin films prepared at the sputtering time about 10 minutes exhibited excellent properties, such as high transmittance, high band-gap energy (3.25 eV), and good crystallinity with c-axis preferred orientation, which are benefit for the preparation of ZnO-based thin film transistors.