Characterization and properties of Zn-O-Se ternary system thin films deposited by radio-frequency (rf)-magnetron sputtering

Abstract Zn–O–Se alloy films were grown on quartz substrate by radio-frequency (rf)-magnetron sputtering ZnSe single crystal target, with high pure Ar and O 2 as working gas. X-ray diffraction and transmission electron microscopy characterizations indicate that the films are amorphous state. Energy disperse spectroscopy and X-ray photoelectron spectroscopy measurements verify the amorphous Zn–O–Se alloy was Se doped ZnO 2 (Zn 1− x Se x O 2 ), in which both Zn and Se atoms are bound with O atom. Absorption spectra exhibit that the optical band gap of Zn 1− x Se x O 2 films are 4–5 eV. After annealing at 673 K in Ar ambient for 15 min, Zn 1− x Se x O 2 film was decomposed to ZnO and SeO 2 , and SeO 2 sublimed while annealed. The band gap energy decreased to the 3.2 eV, which is similar to the value of ZnO film directly deposited on quartz substrate. Room-temperature photoluminescence spectrum of the film after annealed shows NBE emission at 3.26 eV.