Back-gate bias effect on UTBB-FDSOI non-linearity performance

This work investigates experimentally the non-linearities of FDSOI MOSFETs from DC to RF frequencies. The effect of the back-gate bias on non-linearity of the device is studied by means of 2 nd and 3 rd harmonic distortions (HD2 and HD3) extracted from dc I-V curves as well as from large-signal RF measurements using 1-dB and IP3 points. It is shown that the non-linearity is reduced by applying a positive back-gate bias. The reasons for this reduction are increasing of “effective body factor” and lesser mobility degradation with increase of the positive back-gate bias.