Fabrication of MoS 2(1-x) Te 2x via Sulfurization using (t-C 4 H 9 ) 2 S 2 and its Physical Structure Evaluation

Recently, layered material, especially transition metal dichalcogenides (TMDs) are attracting growing attention due to its unique physical properties and wide possibility in applications. In this study, the fabrication of a TMD alloy, MoS 2(1-x) Te 2x is discussed and its physical structure is evaluated. It was shown that MoS 2(1-x) Te 2x can be fabricated with sulfurization of MoS x Te y $( x+y \lt 2.0)$ prepared by co-sputtering. Raman spectroscopy and X-ray photoelectron spectroscopy results confirm the formation of the alloy. Further investigation with X-ray diffraction shows that fabrication condition must be carefully selected in order to prevent phase segregation. Fabrication of the alloy is expected to broaden the application of TMD in optoelectronics field.