The use of triisopropylantimony for the growth of InSb and GaSb

A newly developed Sb source, triisopropylantimony (TIPSb), has been successfully used to grow InSb and GaSb epilayers by atmospheric pressure organometallic vapor phase epitaxy (OMVPE). Both GaSb and InSb have been grown with excellent morphologies. Growth efficiencies indicate that there are no parasitic reactions between TIPSb and trimethylgallium (TMGa) or trimethylindium. For GaSb growth, the temperatures have been varied between 500 and 600 °C. V/III ratios close to unity are necessary to obtain the best morphologies at 600 °C. As the growth temperature is decreased, lower V/III ratios are required. This is because TMGa decomposition is incomplete and TIPSb decomposes completely at these temperatures. The GaSb layers grown at 500 °C have background hole concentrations of 2×1016 cm−3. Low‐temperature photoluminescence (PL) measurements indicate that the acceptor is due to Sb vacancies rather than carbon acceptors. A major advantage of TIPSb is that it decomposes at temperatures much lower than that fo...