Old Web
English
Sign In
Acemap
>
Paper
>
An Approach to Predict 4H-SiC Wafer Bending after Back Side Thinning by Substrate Resistivity Analysis
An Approach to Predict 4H-SiC Wafer Bending after Back Side Thinning by Substrate Resistivity Analysis
2020
Nicolò Piluso
Stefania Rinaldi
Simona Lorenti
Anna Bassi
Andrea Severino
Salvo Coffa
Keywords:
Bending
Composite material
Thinning
Metallurgy
Wafer
substrate resistivity
Materials science
Correction
Source
Cite
Save
Machine Reading By IdeaReader
16
References
0
Citations
NaN
KQI
[]