22nm node p+ junction scaling using B 36 H 44 and laser annealing with or W/O PAI

B 36 H 44 molecular dopants were implanted at 100eV and 1E15/cm 2 B equivalent energy and dose to achieve Xj 36 H 44 without PAI was always better than those reported using monomer B and BF 2 with MSA even though the retained dose was only 67% compared to 100% for monomer B and 55% for BF 2 and we noted that the surface oxide directly affects the retained dose. Adding Ge or In PAI had no effect on dopant activation due to the self-amorphization effects of B 36 H 44 however, Xe-PAI improved activation by 20% but degraded junction leakage. In-PAI also had the highest lifetime. However, we noted that Xe-PAI behaves differently compared to Ge-PAI and In-PAI, TW values were always much higher and independent of the anneal technique (MSA, spike/RTA or furnace anneal) even though no defects could be detected by X-TEM suggesting uniform distribution of vacancy cluster defects throughout the amorphous region.