Growth controlling behavior of vertically aligned MoSe2 film

Abstract Vertical layered MoSe 2 nanosheets have been synthesized via rapid selenization of a magnetron sputtered Mo film with a large number of penetrating microcracks. The phase microstructure and morphologies of Mo and MoSe 2 films were evaluated by X-ray diffractometer, Raman spectroscopy, scanning electron microscopy and transmission electron microscopy. The results indicate that a relatively high argon pressure during the sputtering process allows Mo films to deposit with a multi-crack structure. The microcracks increase the inner surface area of Mo films and provide a rapid transmission tunnel for selenium diffusion, which allows MoSe 2 nanosheets to grow vertically with a c -axis // substrate texture. The growth mechanism for vertically aligned MoSe 2 films has been proposed based on the experimental results. The growth orientation of MoSe 2 film can be precisely controlled by adjusting the density of Mo film precursor under the same selenization condition. These findings provide a new strategy for the preparation and application of highly orientated MoSe 2 film.