Integrated analytical equipment for control of film growth in MBE technology

Abstract The integrated analytical equipment has been developed for in-situ measuring growth rate and film composition by the ultra-fast ellipsometer, surface temperature by the polarization-type pyrometer and for precise control over the epitaxial processes by automatic control system. This complex was used to control the mercury cadmium telluride heteroepitaxial structure growth on GaAs substrate with various composition distributions throughout the thickness. The maintenance accuracy of Hg 1− x Cd x Te composition during growth was up to ΔX CdTe =±0.0005. The maintenance accuracy of substrate temperature was found to be up to ±1°C.