The photoresist composition and the resist pattern forming method for dry exposure

PROBLEM TO BE SOLVED: To provide a photoresist composition for dry exposure excellent in development defect suppressing property, and to provide a method for forming a resist pattern.SOLUTION: The photoresist composition for dry exposure comprises [A] a polymer having an acid dissociable group, [B] an acid generator and [C] a surfactant, in which the content of the [C] surfactant is 1 part by mass or more and 5 parts by mass or less with respect to 100 parts by mass of the [A] polymer. The [C] surfactant is preferably a nonionic surfactant having a fluorine atom or a silicon atom. The content of the [C] surfactant with respect to 100 parts by mass of the [A] polymer is preferably 2 parts by mass or more and 4 parts by mass or less.