A method for adjustment and for exposure of a semiconductor wafer

A method for adjustment and for exposure of a semiconductor wafer having a structure pattern in an exposure apparatus, comprising the steps of: a) providing the semiconductor wafer having at least one exposure field on which a first layer is arranged in which in each case an alignment mark for aligning a semiconductor wafer is formed at least in the exposure apparatus for the exposure of the exposure field, b) forming a measuring structure with a first layer position in the exposure field in the first layer, c) applying a chemical or physical process, at least to the exposure field with the measuring structure, d) measuring a second location position of the measurement structure after the application of the process, e) comparing the first and the second sheet position to determine an influence of the applied process, the position of the characterizing Messtruktur in the exposure field difference, f) loading of the semiconductor wafer in the exposure apparatus and adjusting the semiconductor wafer on the basis of at least one alignment mark for determining an exposure position of the exposure field, g) correcting ...