A sputtering target and an oxide semiconductor film and a method for preparation thereof

The present invention relates to a kind of the oxide semiconductor film, the element containing indium (In), cerium (Ce), zinc (Zn), doped with a metal element (M) and oxygen (O), which In: Ce: Zn molar ratio of 2: (0.5 to 2): 1, the oxide semiconductor film is an n-type semiconductor, the carrier concentration of 10cm ~ 10cm, carrier mobility was 5.0 cmVs ~ 46.3 cmVs. The present invention also relates to a method of producing an oxide semiconductor film, a sputtering target and its preparation method.