A new base resistance controlled thyristor employing trench gate and self-align corrugated p-base

A new trench-gate CB-BRT, which employs the trench gate structure in order to increase the maximum controllable current (MCC) by reducing the channel resistance, is proposed and fabricated. The experimental results show that the MCC of the trench gate CB-BRT increased by 30% and the forward voltage drop decreased by 0.2 V.