Integrated gate-commutated thyristor

The integrated gate-commutated thyristor (IGCT) is a power semiconductor electronic device, used for switching electric current in industrial equipment. It is related to the gate turn-off (GTO) thyristor. The integrated gate-commutated thyristor (IGCT) is a power semiconductor electronic device, used for switching electric current in industrial equipment. It is related to the gate turn-off (GTO) thyristor. It was jointly developed by Mitsubishi and ABB. Like the GTO thyristor, the IGCT is a fully controllable power switch, meaning that it can be turned both on and off by its control terminal (the gate). Gate drive electronics are integrated with the thyristor device. An IGCT is a special type of thyristor. It is made of the integration of the gate unit with the Gate Commutated Thyristor (GCT) wafer device. The close integration of the gate unit with the wafer device ensures fast commutation of the conduction current from the cathode to the gate. The wafer device is similar to a gate turn-off thyristor (GTO). They can be turned on and off by a gate signal, and withstand higher rates of voltage rise (dv/dt), such that no snubber is required for most applications.