Strain fields in twisted bilayer graphene

Twisted bilayer graphene (TBG) displays a host of correlated electronic phases associated with the formation of flat electronic bands near an interlayer "magic angle" (MA) of 1.1 degrees. Intralayer lattice reconstruction, which involves local rotations with consequent localized strain, and symmetry breaking due to extrinsic heterostrain have significant implications for electronic behavior at the MA. Although reconstruction and strain are therefore fundamental to the properties of TBG, directly mapping the reconstruction mechanics in the MA regime has been elusive and the strain tensor fields of TBG have not been measured. Here, we introduce Bragg interferometry, based on four-dimensional scanning transmission electron microscopy (4D-STEM), to capture the atomic displacement fields of TBG with twist angles ranging from 0.1 to 1.6 degrees. Sub-nanometer resolution allows us to image atomic reconstruction in MA-TBG and resolve twist angle disorder at the level of individual moire domains. We quantitatively map the strain tensor fields and uncover that reconstruction proceeds in two distinct regimes depending on the twist angle -- in contrast to previous models depicting a single continuous process -- and we distinguish the contributions of these regimes to the band structure. Further, we find that over a twist angle range encompassing the MA, applied heterostrain accumulates anisotropically in saddle point (SP) regions to generate distinctive striped strain phases. Our results thus establish the reconstruction mechanics underpinning the twist angle dependent electronic behavior of TBG, and provide a new framework for directly visualizing strain and reconstruction in other moire materials.