The Effective Dielectric Constant of Silicon Dioxides Deposited in the Spaces Between Adjacent Conductors

The effective dielectric constants, e eff , of silicon dioxides deposited onto a metallic comb structure were compared with the values, e, (obtained using metal oxide semiconductors capacitors) for the same oxides deposited (under identical conditions) on smooth horizontal surfaces. The value of e eff was calculated from the measured capacitance of the comb structure using the procedure described in the appendix