Over 1 kV Vertical GaN-on-GaN p-n Diodes with Low On-Resistance using Ammonia Molecular Beam Epitaxy

Vertical GaN-on-GaN p-n diodes grown by ammonia molecular beam epitaxy (NH3 MBE) are reported in this letter for prospective high-power application devices. The diodes, consisting of only $4~\mu \text{m}$ drift layer with low unintentional background doping of $\sim 3\times {10}^{{15}}{\mathrm {cm}}^{\text {-3}}$ , showed a maximum breakdown voltage of >1.0 kV and a low differential specific on-resistance of 0.28 $\text{m}\Omega $ -cm2. Moreover, these diodes exhibited an excellent rectifying behavior with a low minimum ideality factor of 1.36 and a punch-through electric field comparable to the state-of-the-art vertical GaN-on-GaN p-n diodes grown by metalorganic chemical vapor deposition (MOCVD). These results suggest that all-MBE vertical GaN-on-GaN p-n diodes grown by NH3 MBE can be promising for small-size high-power electronic devices.