Copper-doped CdTe films with improved hole mobility

Copper-doped CdTe films have been grown by the laser epitaxy approach. X-ray diffraction, Rutherford backscattering, and photoreflectance spectroscopy were utilized to characterize the CdTe:Cu films. Structural analysis suggests that the growth of CdTe:Cu on GaAs(100) is initiated along the (100) orientation, which changes to the (111) direction after the film thickness exceeds 400nm. Hall effect measurements indicate that copper doping can achieve hole mobility over 150cm2∕Vs at room temperature.