Electrically-pumped THz emitters based on plasma waves excitation in III-nitride structures

The excitation of a 2DEG plasmons in AlGaN/GaN heterostructures was proposed at temperatures above 100 K. The peak power and the energy conversion efficiency at the frequency of expected plasmons peak demonstrated up to 940 nW and 25E-9, respectively. Electro-luminescence of shallow impurities such as oxygen and silicon of GaN demonstrated at elevated temperatures without signals thermal quenching at injected electrical power values up to 0.3 W. Proper optimization of the hetero-structures quality and better management of the excess heat resulted into the demonstration of the tunable frequency 2DEG plasmonic-device. Moreover, the surface plasmon-phonon polaritons of the n-GaN grating was also considered for the development of the electrically-pumped THz emitters.