MSR Studies in the Progress Towards Diamond Electronics

The recent development of device quality synthetic diamond dramatically increases the potential of diamond as a wide band gap semiconductor. A remaining obstacle is the lack of shallow n-type dopants. Molecular dopant systems have been shown theoretically to lead to the shallowing of levels in the band gap. Some of these systems involve defect-hydrogen complexes. This, and other phenomena, motivate the study of the chemistry and dynamics of hydrogen in diamond. Much information on this topic has been obtained from Muon Spin Rotation (MSR) experiments. These experiments view the muonium (Mu ≡ μ + e −) atom as a light chemical analogue of hydrogen. Data on isolated muonium in diamond is reviewed, and evidence on formation of N-Mu-N (a shallow dopant candidate), the trapping of Mu at B-dopants, and fast quantum diffusion of muonium are discussed.