Temperature measurement in Al films during electromigration test

A novel measurement structure and method is presented by which one can measure the temperature of Al thin films during electromigration testing with high precision, better than previously attainable. At ambient temperature of 27 degrees C, experimental results show that the temperature and resistance variations of Al films can be considered as three stages. The first stage is the increasing process of the temperature and resistance of Al films (T/sub Al/ and R/sub Al/) due to Joule heating. The second stage is an electromigration process in which the T/sub Al/ and R/sub Al/ varied very slowly. The last is the catastrophic failure process in which the T/sub Al/ and R/sub Al/ increase rapidly until open circuit failure. >