Properties of amorphous ternary alloy films a-SixCyGez:H prepared by magnetron co-sputtering

Abstract Amorphous Si x C y Ge z :H ( x + y + z =1; z ∼0.1) have been deposited by reactive sputtering of Si–Ge composite target in argon–methane gas mixtures. The effects of the addition of Ge and the methane partial pressure P on the film properties were investigated. At high P , the addition of Ge could improve the reduction of the photoconductivity with increasing P observed in a-Si x C y :H ( z =0).