A process for producing an adhesive layer on a semiconductor body

A method comprising the steps of: - removal of a thin layer near the surface of a surface (101) of a semiconductor body (100) of a power semiconductor device in a range in which a pn junction reaches the surface, by a sputtering method, - applying a first layer (21), which is an amorphous carbon layer or an amorphous semiconductor layer on the surface (101) in the area where the near-surface layer was removed, - removal of a thin layer near the surface of the first layer (21) by a sputtering method, - applying a second layer (22) of a passivation material on said first layer (21).