The HVEE Tandetron Line; new developments and design considerations

Abstract HVEE developed a range of tandem accelerators based on the General lonex Tandetron Line which was acquired in 1989. The range consists of a compact 1 MV terminal voltage “low current” Tandetron up to a 3 MV terminal voltage “high current” Tandetron, which are suitable for both analytical measurements and implantation purposes. The primary goal of the development of the Tandetron line was to optimize the versatility of the machines and to increase the reliability of its various components. For the injector this resulted in a new type of heavy ion sputter source and charge exchange canal. At the high energy side of the tandem we designed a beamline with a scanning system and a multiwafer target chamber for ion implantation. A second beamline is equipped with an unconventionally designed, highly automated chamber in which RBS, ERD, NRA and PIXE can be performed. Moreover, 3 MV accelerators are suitable for AMS.