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Growth of single-crystalline GaN layer by UHV sputter-epitaxy method (3)
Growth of single-crystalline GaN layer by UHV sputter-epitaxy method (3)
2018
Takuya Osada
Masaki Iwamoto
A-i Mizuno
Ki Ando
Hiroyuki Shinoda
Nobuki Mutsukura
Keywords:
Materials science
Optoelectronics
Gallium nitride
Epitaxy
Sputtering
layer
Correction
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