Cleaning method after the lapping of silicon wafers

(57) after wrapping Abstract wafer, a method of cleaning contaminants from the surface of the semiconductor wafer. The method comprises a wafer in contact with the oxidizing agent, including that it oxidizes is organic contaminants present on the surface of the wafer. Next, the wafers are immersed in an aqueous bath comprising citric acid sonic energy is devoted, is to remove the metallic contaminants that may be present on the surface of the wafer. After immersion in citric acid bath, the wafers in contact with the hydrofluoric acid, to remove the layer of silicon dioxide that may be present on the surface of the wafer. Next, the sonic energy is devoted to the aqueous bath comprising the alkaline component and a surfactant, immersing the wafer.