Improvement of endurance to hot carrier degradation by hydrogen blocking P-SiO

The authors report on the improvement of the hot-carrier instability of MOSFETs by putting a plasma silicon oxide (P-SiO) of specific composition between the MOSFETs and the plasma silicon nitride (P-SiN) passivation layer. The P-SiO was found to have the capability of completely blocking hydrogen diffusion and water penetration. The hydrogen-blocking effect is attributed to hydrogen trapping by the dangling bonds in P-SiO. The thickness of the P-SiO film was found to be an important factor in the blocking effect. A passivation structure with P-SiO film under P-SiN thus offers protection against hot-carrier degradation, water penetration, and chip cracking. >