Tungsten Nitrides by PECVD: Some Chemical and Structural Characterizations

Abstract Thin films of c-WN: H are synthesized by plasma enhanced chemical vapor deposition using a hot wall type reactor. These films are polycrystalline. The formation temperatures are in the 350-620°C range with WF6, NH3, as precursors and Ar and H2 as feed gas. XRD and XPS analysis show a chemical composition close to that of WN but a structure varying from tungsten form to tungsten nitride. ERDA and RBS analysis provide a hydrogen content and its; concentration profile through the thickness of the coating. AFM measurements are performed to evaluate the growth conditions.