High V th enhancement mode GaN power devices with high I D, max using hybrid ferroelectric charge trap gate stack

In this work, we demonstrate a new concept for realizing high threshold voltage (V th ) E-mode GaN power devices with high maximum drain current (I D, max ). A gate stack ferroelectric blocking film with charge trap layer, achieved a large positive shift of V th . The E-mode GaN MIS-HEMTs with high V th of 6 V shows I D, max 720 mA/mm. The breakdown voltage is above 1100 V.