Busbar design considerations for high power IGBT converters

This paper addresses an important issue in the design and synthesis of high power IGBT converters, i.e. the layout and design of connection busbars. Parasitic inductance, caused by the physical distance current has to flow from the storage capacitors to the static switches and back, is the major constraint in developing a bus structure. This leads to nonideal converter operation, namely voltage overshoot, voltage drop and resonance with snubber capacitors. By analyzing the currents and fields in and around busbars, parasitic inductance can be predicted and limited.