Influence of Crystal Orientation of Ru Under-Layer on Initial Growth of Copper Chemical Vapor Deposition

The effect of Ru crystal orientation on the deposition behavior of chemical vapor deposition (CVD) Cu was investigated. The crystal orientation of Ru films was modulated by adjusting sputtering temperature. Ru(001) and random orientation films were obtained by sputtering at 300 °C and room temperature, respectively. CVD Cu on Ru with the (001) crystal orientation had a smooth morphology and a strong (111) peak. However, CVD Cu on the Ru film with the random orientation had a rough surface and a random orientation. A low lattice misfit between Cu(111) and Ru(001) realized a good morphology and a strong (111) orientation of CVD Cu films, which coincide with our lattice misfit concept.