Relative x-ray reflectometry of discrete layered structures

The relative x-ray reflectometry (RXR) technique has been used for the first time for determining the parameters of a discrete layered structure. The scheme of x-ray optics used for these measurements on two wavelengths is described, the conditions of applicability of the proposed method are formulated, and the algorithm of data processing is described and justified. The results of RXR measurements for a test structure prepared by magnetron sputtering of tantalum onto a silicon substrate via a mask with periodically arranged windows are presented. The proposed RXR scheme can be used in semiconductor technology for the monitoring of parameters of device structures containing nanolayers.