Linear broadband GaNMMICsforKu-band Applications

AlGaN/GaN-based HEMT MMICs ons.i. SiC wafersubstrates aredesigned andrealized forlinear broad- bandamplifiers. Electrical performance dataandassembly technology issues arepresented inthis paper. Thelinear broadband amplifier MMIC operates inthe frequency rangefrom9GHz to19GHz andisfabricated inmicrostrip technology including via-holes. Themeasured smallsignal gainisabout13dB andtheoutputpower at1dB compression isintherangeof27dBm.Two-tone measurements showgoodlinearity. Up to26dBm output powertheIM3valueisbetter than30dBc. A reliable assembly process fortheMMICsisnecessary inordertoachieve goodthermalconductivity between theunderlying SiCwafersubstrate andtheheatspreader beneath. IndexTerms-Broadbandamplifier, Linearity, MMICs, AlGaN/GaN, HEMTs