Information recording medium and method of manufacturing the same, and a sputtering target

Information recording medium of the present invention includes a recording layer that can cause phase change by the application of electrical energy. The recording layer comprises Ge, a material consisting of Te and Sb as main components. The material on the triangular coordinate shown in FIG. 1, the coordinates (Ge, Te, Sb) = when expressed (x, y, z) at point (a) (35,35,30), point (b) (32.5,27.5,40), point (c) (25,25,50) and surrounded by regions at point (d) (27.5,32.5,40) (where the point (a ) - has a composition of point (including each line above a)) - the point (b), point (b) - the point (c), point (c) - the point (d) and point (d)..