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Germanium Passivation for High-k Dielectric III-V MOSFETs and Temperature Dependence of Dielectric Leakage Current
Germanium Passivation for High-k Dielectric III-V MOSFETs and Temperature Dependence of Dielectric Leakage Current
2006
Hyoung Sub Kim
I. Ok
Manhong Zhang
T. Lee
F. Zhu
G. Thareja
L. Yu
S. Koveshnikov
W. Tsai
Vadim Tokranov
Michael Yakimov
S. Oktyabrsky
Jack C. Lee
Keywords:
High-κ dielectric
Hafnium oxide
Gate dielectric
Physics
Optoelectronics
Dielectric
Electronic engineering
Germanium
Gallium arsenide
Leakage (electronics)
Passivation
Correction
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