Depth profile analysis of CuInSe2 (CIS) thin films grown by the electrodeposition technique

Abstract In this study, we report the results obtained from the auger electron spectroscopy (AES) depth profiling of CIS thin films grown by the electrodeposition technique. This result enables one to do a comparison between the bulk and superficial elemental compositions. The AES result is also compared with that obtained by the inductively coupled plasma (ICP) spectroscopy. These results support our proposition that the electrodeposited CIS film has a Cu-rich bulk region and an In rich surface, which leads to the formation of an n-layer (CuIn 2 Se 3.5 ) on the top of the p-type CIS (CuInSe 2 ) phase