ULTRA-SHALLOWJUNCTIONFORMATIONBYPLASMADOPING AND FLASHLAMPANNEALING

Ultra-shallow P+/N junctions wereformed byboron doping using plasma doping method combined withactivation annealing using spike-RTA, flash lampannealing orlaser annealing. Thejunctions formed withflash lampannealing orlaser annealing were promising andsuperior tothose formed byconventional lowenergy ionimplantation method fromtheviewpoints ofshallowness, abruptness andlowsheet resistance. The pre-amolphization byHeplasma treatment (He-PA process) played animportant role for thesuccessful formation orthese junctions. Electrical properties wereanalyzed bynot only sheet resistance butalso Hall measurements andjunction leakage measurement.