Experimental verification of a model-based decomposition method for double dipole lithography

Double Dipole Lithography (DDL) is one of the candidates for extending optical lithography into the k 1 =0.30 regime. In 2001 the first experimental 2D elbow structures were reported. In 2002 a rule based decomposition and a model assisted decomposition method were presented. In 2003 a new, model based decomposition step has been presented. Now we present the results of applying this model based decomposition by discussing the first experimental results on a 0.75 NA ArF scanner printing 70 nm lines at various pitches (160 nm and larger, i.e. k 1 =0.31 and up). We provide an assessment of the current state of maturity of the DDL technology for the low-k 1 regime (0.3..0.4). This is based upon CD uniformity, 2D pattern fidelity and through pitch process latitude behavior.