Direct Integration of Optimized Phase-change Heat Spreaders into SiC Power Module for Thermal Performance Improvements under High Heat Flux

The relatively smaller die size of SiC chips makes the heat flux increase significantly, which brings new challenges to the thermal management and reliability of SiC power modules. This paper proposes a new thermal enhanced packaging method based on vapor chamber (VC) phase change heat spreader (PCHS) for SiC power modules, achieving the advantages of high thermal conductivity, low weight, low cost and low thermal stress. In this design, SiC MOSFET bare dies are directly soldered on the top of VC-PCHS, which not only act as heat spreaders but also conduct their drain current. The integrated VC-PCHS is optimized based on thermal and thermomechanical performances. A SiC power module prototype directly integrated with VC-PCHS is built using a new fabrication process. Both the simulations and experiments demonstrate significant improvements in thermal and thermomechanical performance. The modules integrated with VC-PCHS can operate under 200 W of power dissipation per die (632 W/cm2) without exceeding the maximum rated junction temperature. This paper reveals the potential of directly integrating phase change cooling components inside power modules, providing a new solution to improve the thermal performance and reliability of SiC power modules without adding complexity and energy consumptions to external cooling systems.